Graphene-Based Etch Resist for Semiconductor Device Fabrication
- 27 April 2020
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Nano Materials
- Vol. 3 (5), 4635-4641
- https://doi.org/10.1021/acsanm.0c00658
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- CMOS patterning over high-aspect ratio topographies for N10/N7 using spin-on carbon hardmasksPublished by SPIE-Intl Soc Optical Eng ,2017
- Spin-on Metal Oxides and Their Applications for Next Generation LithographyJournal of Photopolymer Science and Technology, 2016
- Progress in Spin-on Hard Mask Materials for Advanced LithographyJournal of Photopolymer Science and Technology, 2014
- Relationship between bonding characteristics and etch-durability of amorphous carbon layerThin Solid Films, 2013
- Spin-on-carbon-hardmask with high wiggling resistancePublished by SPIE-Intl Soc Optical Eng ,2012
- Low Stress TiN as Metal Hard Mask for Advance Cu-InterconnectECS Transactions, 2012
- High aspect ratio contact hole etching using relatively transparent amorphous carbon hard mask deposited from propyleneThin Solid Films, 2010
- Dry etch selectivity of a-C:H hardmasks for sub-65nm patterning applicationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2009
- Generating sub-30-nm polysilicon gates using PECVD amorphous carbon as hardmask and anti-reflective coatingPublished by SPIE-Intl Soc Optical Eng ,2003
- Hardmask technology for sub-100 nm lithographic imagingPublished by SPIE-Intl Soc Optical Eng ,2003