CMOS patterning over high-aspect ratio topographies for N10/N7 using spin-on carbon hardmasks
- 27 March 2017
- conference paper
- conference paper
- Published by SPIE-Intl Soc Optical Eng in Advances in Patterning Materials and Processes XXXIV
- p. 1014618-1014618-7
- https://doi.org/10.1117/12.2257668
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Progress in Spin-on Hard Mask Materials for Advanced LithographyJournal of Photopolymer Science and Technology, 2014
- Precuring implant photoresists for shrink and patterning controlJournal of Micro/Nanolithography, MEMS, and MOEMS, 2013
- Fin Doping by Hot Implant for 14nm FinFET Technology and BeyondECS Transactions, 2013
- Multi-Gate Fin Field-Effect Transistors Junctions Optimization by Conventional Ion Implantation for (Sub-)22 nm Technology Nodes Circuit ApplicationsJapanese Journal of Applied Physics, 2011