Realization of high detectivity mid-infrared photodiodes based on highly mismatched AlInSb on GaAs substrates
- 4 February 2021
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 129 (5), 053106
- https://doi.org/10.1063/5.0032563
Abstract
We have systematically investigated highly mismatched AlInSb photodiodes grown on GaAs substrates operating in the mid-infrared range. A novel characterization method was introduced to analyze the recombination mechanism within an active layer of the devices, which revealed a high conductance stemming from the leaky behavior of dislocations. The introduction of a dislocation filter layer successfully reduced threading dislocations and improved resistance area product of photodiodes, leading to high detectivity at room temperature.Keywords
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