The influence of melt purification and structure defects on mid-infrared light emitting diodes
- 19 June 2003
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 36 (13), 1484-1488
- https://doi.org/10.1088/0022-3727/36/13/309
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Physics and technology of mid–infrared light emitting diodesPhilosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 2001
- Recombination lifetimes in undoped, low-band gap InAsyP1−y/InxGa1−xAs double heterostructures grown on InP substratesApplied Physics Letters, 2001
- Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDsIEE Proceedings - Optoelectronics, 2000
- Powerful interface light emitting diodes for methane gas detectionJournal of Physics D: Applied Physics, 1999
- Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3–5 µmSemiconductors, 1999
- Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium getteringJournal of Applied Physics, 1999
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952