Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
- 27 March 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (13), 131911
- https://doi.org/10.1063/1.2172742
Abstract
We demonstrate the growth of a low dislocation density, relaxed GaSb bulk layer on a (001) GaAs substrate. The strain energy generated by the 7.78% lattice mismatch is relieved by a periodic array of 90° misfit dislocations. The misfit array is localized at the Ga Sb ∕ Ga As interface and has a period of 5.6 nm which is determined by transmission electron microscope images. No threading dislocations are visible. The misfits are identified as 90°, rather than 60°, using Burger’s circuit analysis, and are therefore not associated with generation of threading dislocations. A low dislocation density and planar growth mode is established after only 3 monolayers of GaSb deposition as revealed by reflection high-energy electron diffractionpatterns. Calculations corroborate the materials characterization and indicate the strain energy generated by the 7.78% lattice mismatch is almost fully dissipated by the misfit array. The low dislocation density bulk GaSbmaterial on GaAs enabled by this growth mode will lead to new devices, especially in the infrared regime, along with novel integration schemes.This publication has 15 references indexed in Scilit:
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