Reactive ion etching of gallium nitride using hydrogen bromide plasmas
- 27 October 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (22), 1895-1897
- https://doi.org/10.1049/el:19941247
Abstract
The characteristics of the reactive ion etching (RIE) of gallium nitride (GaN) have been investigated using HBr, 1:1 HBr:Ar, and 1:1 HBr:H2 plasmas. Etch rates were found to increase with plasma self-bias voltage for all gas mixtures exceeding 60 nm/min at –400 V for pure HBr. Higher etch rates were obtained for pure HBr than for HBr mixtures with Ar and H2. Chamber pressure was also found to slightly affect etch rates for the pressure ranges investigated. The anisotropy of etched profiles was found to improve with increasing pressure. Smooth etched surfaces are also demonstrated.Keywords
This publication has 6 references indexed in Scilit:
- Characteristics of chemically assisted ion beam etching of gallium nitrideApplied Physics Letters, 1994
- Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InNApplied Physics Letters, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Reactive ion etching of GaN using BCl3Applied Physics Letters, 1994
- Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)Applied Physics Letters, 1993
- Crystallographic etching of GaAs with bromine and chlorine plasmasJournal of Applied Physics, 1983