Generation and detection of Terahertz radiation by field effect transistors
- 31 October 2010
- journal article
- review article
- Published by Cellule MathDoc/CEDRAM in Comptes Rendus Physique
- Vol. 11 (7-8), 413-420
- https://doi.org/10.1016/j.crhy.2010.05.003
Abstract
This is an overview of the main physical ideas for application of field effect transistors for generation and detection of Terahertz radiation. Resonant frequencies of the two-dimensional plasma oscillations in FETs increase with the reduction of the channel dimensions and reach the THz range for sub-micron gate lengths. When the mobility is high enough, the dynamics of a short channel FET at THz frequencies is dominated by plasma waves. This may result, on the one hand, in a spontaneous generation of plasma waves by a dc current and on the other hand, in a resonant response to the incoming radiation. In the opposite case, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. Nous présentons les bases physiques de l'émission et de la détection de rayonnement térahertz par des transistors à effet de champ (FET). Les fréquences de résonance des oscillations de type plasma à deux dimensions dans les transistors FET augmentent quand les dimensions du canal du transistor sont diminuées, et ainsi elles atteignent le domaine térahertz pour des longueurs de grille sub-microniques. Quand la mobilité des porteurs est suffisamment grande, la dynamique d'un transistor FET à canal court est dominée par les ondes de plasma. Cela peut conduire d'une part à l'émission spontanée d'onde de plasma en alimentant le transistor par un courant continu, et d'autre part à une réponse résonante à un rayonnement incident. Dans le cas opposé, quand les oscillations de plasma sont sur-atténuées, le transistor peut fonctionner comme un détecteur efficace et large bande d'ondes THz.Keywords
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