Compensation Dependence of Impurity Conduction in Antimony-Doped Germanium
- 13 December 1965
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 140 (6A), A2183-A2194
- https://doi.org/10.1103/physrev.140.a2183
Abstract
A study has been made of the compensation dependence of impurity conduction in -type germanium containing between 7× and 2× antimony atoms , the compensation being changed by fastneutron irradiation. Activation energies , , and , characteristic of the resistivity-temperature curves, change continuously with increasing compensation. The energies and increase monotonically with compensation, while passes through a minimum value. The compensation dependence of is in qualitative agreement with the suggestions that this activation energy is associated with the thermal excitation of electrons from the donor ground state to a band that arises from the interaction of negatively charged donors. For small donor concentrations, the value of the compensation at which is a minimum is 0.5, in agreement with the Miller-Abrahams theory. At higher donor concentrations, this minimum occurs at smaller compensations. It is suggested that this occurs because the effective compensation at low temperatures is greater than that determined at room temperature, the increase arising because electrons on neutral donors are lost not only to acceptor sites but also to the negatively charged donor band.
Keywords
This publication has 28 references indexed in Scilit:
- Effect of Uniaxial Compression on Impurity Conduction in-Type GermaniumPhysical Review B, 1962
- Hall Effect in Impurity ConductionPhysical Review B, 1961
- Galvanomagnetic Effects in-Ge in the Impurity Conduction RangePhysical Review B, 1961
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960
- Impurity Conduction in Transmutation-Doped-Type GermaniumPhysical Review B, 1960
- Effect of Minority Impurities on Impurity Conduction in-Type GermaniumPhysical Review B, 1959
- A Theory of Impurity Conduction. IIJournal of the Physics Society Japan, 1958
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958
- Electrical Properties of Germanium Semiconductors at Low TemperaturesPhysical Review B, 1955
- Resistivity and Hall Effect of Germanium at Low TemperaturesPhysical Review B, 1954