Passive-intermodulation analysis between rough rectangular waveguide flanges
- 8 August 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 53 (8), 2515-2525
- https://doi.org/10.1109/tmtt.2005.852771
Abstract
A new model is presented for the calculation of passive intermodulation (PIM) in waveguide connections. The model considers the roughness of interconnecting waveguide surfaces and the presence of an insulator layer (oxide and contaminants) on these metal surfaces. This results in the generation of a contact resistance, which can excite the PIM level. In particular, the case in which metal-insulator-metal regions are the PIM source is especially investigated. The intermodulation level response is calculated for different waveguide junction parameters like applied mechanical load, surface finish, or metal properties showing qualitative agreement with the measured data published by previous authors.Keywords
This publication has 23 references indexed in Scilit:
- Passive intermodulation on large reflector antennasIEEE Antennas and Propagation Magazine, 2002
- An Elliptic Elastic-Plastic Asperity Microcontact Model for Rough SurfacesJournal of Tribology, 1998
- Physical interpretations concerning nonlinear conductivity phenomena across no-load switching contactsIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1991
- An Elastic-Plastic Model for the Contact of Rough SurfacesJournal of Tribology, 1987
- Predicting Microfracture in Ceramics Via a Microcontact ModelJournal of Tribology, 1986
- Intermodulation generation by electron tunneling through aluminum-oxide filmsProceedings of the IEEE, 1979
- The normal approach between rough flat surfaces in contactWear, 1975
- Contact of nominally flat surfacesProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1966
- Influence of non-uniform thickness of dielectric layers on capacitance and tunnel currentsSolid-State Electronics, 1966
- Effect of Insulating-Film-Thickness Nonuniformity on Tunnel CharacteristicsJournal of Applied Physics, 1963