Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2
- 31 May 2011
- journal article
- conference paper
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 88 (5), 814-816
- https://doi.org/10.1016/j.mee.2010.06.041
Abstract
No abstract availableKeywords
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