Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness

Abstract

Gallium nitride based microcavity light emitting diodes less than $400\mathrm{nm}$ thick emitting at a peak wavelength of $455\mathrm{nm}$ have been fabricated. The epitaxial structure was grown by metal organic chemical vapor deposition, and the device was fabricated using a laser lift-off process. Cavity thinning was carried out using inductively coupled plasma etching until a cavity length of roughly $2\lambda$ ($\sim 375\mathrm{nm}$ , corresponding to a cavity order of 4 for $\lambda =455\mathrm{nm}$ in GaN) was achieved. Devices are presented that show perfectly detuned angular emission and perfectly resonant emission between the cavity length and emission wavelength.