Single-Crystalline Ferroelectric Thin Films by Ion Implantation and Direct Wafer Bonding

Abstract

Layer splitting by helium and/or hydrogen implantation and wafer bonding was applied to transfer thin single-crystalline ferroelectric layers onto different substrates. The optimum conditions for achieving blistering/splitting after post-implantation annealing were experimentally obtained for LiNbO₃, LaAlO₃, SrTiO₃ single crystals and PLZT ceramic. Under certain implantation conditions large area exfoliation instead of blistering occurs after annealing of as-implanted substrates. Small area single-crystalline layer transfer was successfully achieved.