Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO

Abstract

X-ray absorption fine structure (XAFS) and first-principles calculations were employed to study the structure and ferromagnetism origin of ${\mathrm{Zn}}_{0.97}{\mathrm{Mn}}_{0.03}\mathrm{O}$ thin film grown by metal organic chemical vapor deposition. The magnetization measurements indicate that this sample is ferromagnetic at room temperature. The Mn ions are located at the substitutional Zn sites as revealed by the Mn $K$ -edge XAFS spectroscopy. Moreover, the O $K$ -edge XAFS analysis indicated the existence of numerous Zn vacancies. Based on first-principles calculations, the authors propose that the Zn vacancy can induce the room-temperature ferromagnetism in Mn-doped ZnO.