Control of the Anomalous Hall Effect by Doping inEu1−xLaxTiO3Thin Films

Abstract

The anomalous Hall effect (AHE) has been studied for epitaxial films of ${\mathrm{Eu}}_{1-x}{\mathrm{La}}_x{\mathrm{TiO}}_3$, in which band filling can be controlled by doping $x$ without undesired changes in magnetization. This system has a simple band structure near the conduction band bottom, which makes it possible to design the AHE. As expected, the anomalous Hall resistivity shows a nonmonotonic change as a function of the carrier density accompanied with the sign reversal around $n=2.4\times {10}^{20}{\mathrm{cm}}^{-3}$. This opens a possibility to control the AHE by devising the material, structure, and doping level.