Fabrication and characterization of a nanoelectromechanical switch with 15-nm-thick suspension air gap
- 10 March 2008
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 92 (10)
- https://doi.org/10.1063/1.2892659
Abstract
We developed titanium nitride (TiN) based nanoelectromechanical (NEM) switch with the smallest suspension air-gap thickness ever made to date by a “top-down” complementary metal-oxide semiconductor fabrication methods. Cantilever-type NEM switch with a 15-nm-thick suspension air gap and a 35-nm-thick TiN beam was successfully fabricated and characterized. The fabricated cantilever-type NEM switch showed an essentially zero off current, an abrupt switching with less than 3mV/decade, and an on/off current ratio exceeding 105 in air ambient. Also achieved was an endurance of over several hundreds of switching cycles under dc and ac biases in air ambient.Keywords
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