Efficient 3.3 µm light emitting diodes for detecting methane gas at room temperature
- 10 November 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (23), 1968-1969
- https://doi.org/10.1049/el:19941360
Abstract
In0.97Ga0.03As light emitting diodes were grown on p-type InAs substrates by liquid phase epitaxy (LPE). These devices exhibit efficient infrared emission at 3.3 µm and can be used to fabricate infrared methane gas sensors for the cost-effective detection and monitoring of methane gas in various applications.Keywords
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