Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs
- 1 December 2013
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 13.5.1-13.5.4
- https://doi.org/10.1109/iedm.2013.6724625
Abstract
A first time rigorous experimental study of effective current (I eff ) variability in high-volume manufacturable (HVM) 14nm Silicon-On-Insulator (SOI) FINFETs is reported which identifies, threshold voltage (Vtlin), external resistance (Rext), and channel trans-conductance (Gm) as three independent sources of variation. The variability in Gm, Vtlin (A VT =1.4(n)/0.7(p) mV-μm), and Ieff exhibit a linear Pelgrom fit indicating local variations, along with non-zero intercept which suggests the presence of global variations at the wafer level. Relative contribution of Gm to Ieff variability is dominant in FINFETs with small number of fins (Nfin); however, both Gm and Rext variations dominate in large Nfin devices. Relative contribution of Vtlin remains almost independent of Nfin. Both n and p FINFETs show the above mentioned trends.Keywords
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