Synthesis of GaN nanocrystals by sequential ion implantation

Abstract

We have synthesized GaN nanocrystals by sequential implantation of Ga and N ions into a sapphire substrate followed by a postimplantation anneal. The nanocrystals have been identified as the wurtzite phase α-GaN structure by transmission electron microscopy. We also found that the nanocrystals are aligned with the sapphire following the relationship: ${\text{(0001)}}_{\mathrm{sapphire}}{\text{∥(0001)}}_{\mathrm{GaN}}$ and ${\text{(112̄0)}}_{\mathrm{sapphire}}{\text{∥(112̄0)}}_{\mathrm{GaN}}.$ The use of a sapphire substrate allows for the measurements of optical properties, and near band-edge luminescence and the yellow band are observed in photoluminescence spectroscopy.