Molecular beam epitaxy of III–V diluted magnetic semiconductor (Ga,Mn)Sb
- 1 May 2000
- journal article
- Published by Elsevier BV in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 7 (3-4), 981-985
- https://doi.org/10.1016/s1386-9477(00)00100-4
Abstract
No abstract availableKeywords
Funding Information
- Japan Society for the Promotion of Science (09244103, RFTF97P00202)
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 4 references indexed in Scilit:
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAsApplied Physics Letters, 1996
- GaSb single crystals doped with manganeseJournal of Crystal Growth, 1993
- Diluted magnetic III-V semiconductorsPhysical Review Letters, 1989
- A Theory of Metallic Ferro- and Antiferromagnetism on Zener's ModelProgress of Theoretical Physics, 1956