Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers

Abstract

Extreme aspect ratio tubes and wires of polycrystallinesilicon and germanium have been deposited within silicamicrostructured optical fibers using high-pressure precursors, demonstrating the potential of a platform technology for the development of in-fiber optoelectronics. Microstructural studies of the deposited material using Raman spectroscopy show effects due to strain between core and cladding and the presence of amorphous and polycrystalline phases for silicon.Germanium, in contrast, is more crystalline and less strained. This in-fiber device geometry is utilized for two- and three-terminal electrical characterization of the key parameters of resistivity and carrier type, mobility and concentration.