Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 49 (1), 112-119
- https://doi.org/10.1109/16.974757
Abstract
Intrinsic threshold voltage fluctuations introduced by local oxide thickness variations (OTVs) in deep submicrometer (decanano) MOSFETs are studied using three-dimensional (3-D) numerical simulations on a statistical scale. Quantum mechanical effects are included in the simulations employing the density gradient (DG) formalism. The random Si/SiO/sub 2/ and gate/SiO/sub 2/ interfaces are generated from a power spectrum corresponding to the autocorrelation function of the interface roughness. The impact on the intrinsic threshold voltage fluctuations of both the parameters used to reconstruct the random interface and the MOSFET design parameters are studied using carefully designed simulation experiments. The simulations show that intrinsic threshold voltage fluctuations induced by local OTV become significant when the dimensions of the devices become comparable to the correlation length of the interface. In MOSFETs with characteristic dimensions below 30 nm and conventional architecture, they are comparable to the threshold voltage fluctuations introduced by random discrete dopants.Keywords
This publication has 24 references indexed in Scilit:
- Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation studyIEEE Transactions on Electron Devices, 2001
- Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage currentIEEE Transactions on Electron Devices, 2001
- Hierarchical approach to "atomistic" 3-D MOSFET simulationIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1999
- HF-chemical etching of the oxide layer near a SiO2/Si(111) interfaceApplied Physics Letters, 1998
- Multi-dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming TechniquesPublished by Springer Science and Business Media LLC ,1998
- Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristicsIEEE Transactions on Electron Devices, 1997
- Scaling Analysis of SiO2/Si Interface Roughness by Atomic Force MicroscopyJapanese Journal of Applied Physics, 1994
- Surface roughness at the Si(100)-interfacePhysical Review B, 1985
- The Si–SiO2 interface: Correlation of atomic structure and electrical propertiesJournal of Vacuum Science & Technology A, 1984