Oxidation Process of Hydrogen Terminated Silicon Surface Studied by Thermal Desorption Spectroscopy
- 1 March 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (3B), L419
- https://doi.org/10.1143/jjap.30.l419
Abstract
The oxidation process of hydrogen terminated silicon surface is investigated by thermal desorption spectroscopy (TDS). Oxidation proceeds by two steps, at about 500°C and 800°C, by the desorption of hydrogen and the consumption of oxygen and water. Oxygen and water are consumed simultaneously, but water consumption does not change with oxygen supply. The oxidation process changes by the presence of the native oxide.Keywords
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