New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions
- 1 September 2006
- journal article
- Published by Elsevier BV in Microelectronics Reliability
- Vol. 46 (9-11), 1772-1777
- https://doi.org/10.1016/j.microrel.2006.07.058
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Extraction of Accurate Thermal Compact Models for Fast Electro-Thermal Simulation of IGBT Modules in Hybrid Electric VehiclesMicroelectronics Reliability, 2005