Ge–Sn semiconductors for band-gap and lattice engineering
- 14 October 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (16), 2992-2994
- https://doi.org/10.1063/1.1515133
Abstract
We describe a class of Si-based semiconductors in the system. Deuterium-stabilized Sn hydrides provide a low-temperature route to a broad range of highly metastable compositions and structures. Perfectly epitaxial diamond-cubic alloys are grown directly on Si(100) and exhibit high thermal stability, superior crystallinity, and crystallographic and optical properties, such as adjustable band gaps and lattice constants. These properties are completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry. Ab initio density functional theory simulations are also used to elucidate the structural and spectroscopic behavior.
Keywords
This publication has 10 references indexed in Scilit:
- Simple chemical routes to diamond-cubic germanium–tin alloysApplied Physics Letters, 2001
- Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1−xSnx (x≲0.26) alloys on Ge(001)2×1Journal of Applied Physics, 1998
- The effect of the violation of Vegard's law on the optical bowing in Si1 − xGex alloysPhysics Letters A, 1997
- Interband Transitions inAlloysPhysical Review Letters, 1997
- Fabrication and properties of epitaxially stabilized Ge / α-Sn heterostructures on Ge(001)Journal of Crystal Growth, 1992
- Bond-length relaxation in crystalline alloys: An extended x-ray-absorption fine-structure studyPhysical Review B, 1992
- Epitaxial growth of metastable SnGe alloysApplied Physics Letters, 1989
- Electronic properties of metastablealloysPhysical Review B, 1987
- Dielectric function ofα-Sn and its temperature dependencePhysical Review B, 1985
- Resonant Raman scattering in germaniumSolid State Communications, 1972