Heteroepitaxial ultrafine wire-like growth of InAs on GaAs substrates
- 11 March 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (10), 1080-1082
- https://doi.org/10.1063/1.104377
Abstract
We demonstrate heteroepitaxial ultrafine wire-like growth of InAs. Ultrafine InAs whiskers with diameters less than 20 nm are grown selectively on SiO2-patterned GaAs substrates using metalorganic vapor phase epitaxy. These InAs nanowhiskers grow epitaxially with a growth axis parallel to the 〈111〉As dangling bond direction of the GaAs substrate surface irrespective of substrate orientation.Keywords
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