Growth of Bismuth Sulfide Nanowire Using Bismuth Trisxanthate Single Source Precursors
- 4 November 2003
- journal article
- research article
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 15 (24), 4544-4554
- https://doi.org/10.1021/cm021813k
Abstract
Crystalline Bi2S3 nanorods, nanotapes, and nanocrystals were obtained from the solvent thermalysis of bismuth trisxanthate precursors and related bismuth dithiocarbamate species in ethylene glycol at 197 °C. Precursors with different structural motifs were designed to produce compounds with different thermal decomposition temparatures, i.e., the dimeric motif of Bi(S2COR)3 when R = methyl and ethyl was found to have a lower decomposition temperature compared to precursors adopting the polymeric structure, so that solvothermalysis of the former gave rise to short nanocrystals; while in the case of the latter, long nanofibers were produced instead. Chemical vapor deposition on silicon substrates yielded well-defined nanorods of various lengths and diameters for almost all precursors. Internal microstructure of the nanorods was studied by high-resolution transmission electron microscopy.Keywords
This publication has 26 references indexed in Scilit:
- Bismuth(III) thiolates: Syntheses and the structures of a neutral thiolate and a thiolato anionPolyhedron, 1995
- Chemical deposition of metal chalcogenide thin filmsMaterials Chemistry and Physics, 1991
- Preparation of Bismuth Sulfide Thin Films by Solution Pyrolysis of Bismuth Dithiocarbamate ComplexesBulletin of the Chemical Society of Japan, 1989
- Quantum effects in anisotropic semiconductor clusters: colloidal suspensions of bismuth sesquisulfide and antimony sesquisulfideThe Journal of Physical Chemistry, 1987
- Clusters in solution: Growth and optical properties of layered semiconductors with hexagonal and honeycombed structuresThe Journal of Chemical Physics, 1986
- Carrier confinement and special crystallite dimensions in layered semiconductor colloidsPhysical Review B, 1986
- Growth of Bi2S3 film using a solution-gas interface techniqueThin Solid Films, 1983
- Structural characterization of Bi2−xSbxS3 films prepared by the dip-dry methodThin Solid Films, 1983
- The photoelectrochemical properties of anodic Bi2S3 filmsJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1979
- Electrical and optical properties of some M2v−bN3vi−b semiconductorsJournal of Physics and Chemistry of Solids, 1957