Transport properties of Bi nanowire arrays
- 26 June 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (26), 3944-3946
- https://doi.org/10.1063/1.126829
Abstract
To explain various temperature-dependent resistivity measurements [R(T)] on bismuth (Bi) nanowires as a function of wire diameter down to 7 nm, a semiclassical transport model is developed, which explicitly considers anisotropic and nonparabolic carriers in cylindrical wires, and the relative importance of various scattering processes. R(T) of 40 nm Bi nanowires with various Te dopant concentrations is measured and interpreted within this theoretical framework.Keywords
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