Reliability of SiC MOS devices
- 30 November 2004
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 48 (10-11), 1717-1720
- https://doi.org/10.1016/j.sse.2004.05.005
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- High temperature SiC trench gate p-IGBTsIEEE Transactions on Electron Devices, 2003
- Fowler–Nordheim hole tunneling in p-SiC/SiO2 structuresApplied Physics Letters, 2000
- Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbideApplied Physics Letters, 2000
- Analysis of Fowler–Nordheim injection in NO nitrided gate oxide grown on n-type 4H–SiCMicroelectronics Reliability, 2000
- Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytypeIEEE Electron Device Letters, 1999
- Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitorsIEEE Electron Device Letters, 1997
- Intrinsic SiC/SiO2 Interface Statesphysica status solidi (a), 1997
- Band offsets and electronic structure of SiC/SiO2 interfacesJournal of Applied Physics, 1996
- Temperature dependence of the Fowler–Nordheim current in metal-oxide-degenerate semiconductor structuresJournal of Applied Physics, 1995