Laser-Induced Exciton Splitting
- 2 January 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 62 (1), 74-77
- https://doi.org/10.1103/physrevlett.62.74
Abstract
A laser beam irradiating a semiconductor in its transparency region induces a splitting of the exciton line through the dependence of the optical Stark effect on the different transition matrix elements. The splitting is observed in bulk and multiple-quantum-well GaAs, by femtosecond time-resolved spectroscopy for various polarization configurations. Experimental results are in good agreement with theory.Keywords
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