Subthreshold characteristics of insulated-gate field-effect transistors

1 November 1973

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Circuit Theory

Vol. 20 (6), 659-665
https://doi.org/10.1109/tct.1973.1083759

Abstract

A simple analytical model is developed for the subthreshold region of insulated-gate field-effect transistors (IGFET). For short channels, it is necessary to extend the model to include two-dimensional band-bending effects at the source in order to describe correctly the reduction in threshold caused by high drain and substrate voltages. The model is experimentally verified over a wide range of bias conditions and channel lengths and is compared with one- and two-dimensional numerical models.

Keywords

This publication has 11 references indexed in Scilit:

Ion-implanted complementary MOS transistors in low-voltage circuits
IEEE Journal of Solid-State Circuits, 1972
Low level currents in insulated gate field effect transistors
Solid-State Electronics, 1972
Subthreshold drain leakage currents in MOS field-effect transistors
IEEE Transactions on Electron Devices, 1972
Leakage currents of m.o.s. devices under surface-depletion conditions
Electronics Letters, 1972
The distribution of mobile carriers in the pinch-off region of an insulated-gate field-effect transistor and its influence on device breakdown
Solid-State Electronics, 1971
Technology and performance of integrated complementary MOS circuits
IEEE Journal of Solid-State Circuits, 1969
Physical limitations of MOS structures
Solid-State Electronics, 1969
Theoretical threshold voltages for MOS field effect transistors
Solid-State Electronics, 1968
Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors
Solid-State Electronics, 1966
$n$ -Type Surface Conductivity on $p$ -Type Germanium
Physical Review B, 1953

Cited by 43 articles