High-flux, high-efficiency transparent-substrate AlGaInP/GaP light-emitting diodes
- 1 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (18), 1781-1782
- https://doi.org/10.1049/el:19981217
Abstract
Data are presented demonstrating red-orange-yellow spectrum (AlxGa1-x)0.5In0.5P/GaP high-power light-emitting diode (LED) lamps which emit 10–20 lm of flux while simultaneously maintaining luminous efficiencies of ≥ 20 lm/W. The flux emitted by these devices represents an improvement of about five times compared to conventional high-brightness transparent-substrate (AlxGa1-x)0.5In0.5P/GaP LED lamps.Keywords
This publication has 3 references indexed in Scilit:
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- Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1−x)0.5In0.5P/GaP light-emitting diodesApplied Physics Letters, 1994