Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells
Open Access
- 17 February 2014
- journal article
- Published by Springer Science and Business Media LLC in Nanoscale Research Letters
- Vol. 9 (1), 80
- https://doi.org/10.1186/1556-276x-9-80
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Solar cell efficiency tables (version 41)Progress in Photovoltaics: Research and Applications, 2012
- High responsivity GaNAsSb p-i-n photodetectors at 13µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxyOptics Express, 2008
- Development of GaInNAsSb alloys: Growth, band structure, optical properties and applicationsPhysica Status Solidi (b), 2007
- Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxyJournal of Applied Physics, 2007
- Physics and Applications of Dilute NitridesPublished by Taylor & Francis Ltd ,2004
- Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamicsJournal of Applied Physics, 2003
- GaNAsSb: how does it compare with other dilute III V-nitride alloys?Semiconductor Science and Technology, 2002
- Nitrogen Solubility and Induced Defect Complexes in Epitaxial GaAs:NPhysical Review Letters, 2001
- 1-eV solar cells with GaInNAs active layerJournal of Crystal Growth, 1998
- Subpicosecond luminescence spectroscopy using sum frequency generationApplied Physics Letters, 1987