Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices
- 9 January 2012
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 100 (2), 023109
- https://doi.org/10.1063/1.3675633
Abstract
Graphene-based non-volatile memory devices composed of a single-layer graphene channel and an Al2O3/HfOx/Al2O3charge-storage layer exhibit memory functionality. The impact of the gate material’s work-function (Φ) on the memory characteristics is investigated using different types of metals [Ti (ΦTi = 4.3 eV) and Ni (ΦNi = 5.2 eV)]. The ambipolar carrier conduction of graphene results in an enlargement of memory window (ΔVM), which is ∼4.5 V for the Ti-gate device and ∼9.1 V for the Ni-gate device. The increase in ΔVM is attributed to the change in the flat-band condition and the suppression of electron back-injection within the gate stack.Keywords
This publication has 23 references indexed in Scilit:
- Charge transfer hysteresis in graphene dual-dielectric memory cell structuresApplied Physics Letters, 2011
- Large intrinsic energy bandgaps in annealed nanotube-derived graphene nanoribbonsNature Nanotechnology, 2010
- Graphene Oxide Thin Films for Flexible Nonvolatile Memory ApplicationsNano Letters, 2010
- Flexible Organic Bistable Devices Based on Graphene Embedded in an Insulating Poly(methyl methacrylate) Polymer LayerNano Letters, 2010
- NiO Resistive Random Access Memory Nanocapacitor Array on GrapheneACS Nano, 2010
- Ambipolar Memory Devices Based on Reduced Graphene Oxide and NanoparticlesAdvanced Materials, 2010
- Nonvolatile resistive switching in graphene oxide thin filmsApplied Physics Letters, 2009
- Graphene: Status and ProspectsScience, 2009
- Direct observation of a widely tunable bandgap in bilayer grapheneNature, 2009
- The electronic properties of grapheneReviews of Modern Physics, 2009