A 4–41 GHz Singly Balanced Distributed Mixer Using GaAs pHEMT Technology
- 5 February 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 17 (2), 136-138
- https://doi.org/10.1109/lmwc.2006.890341
Abstract
A broadband singly balanced distributed mixer is developed using a 0.15-mum GaAs pHEMT foundry process. It is the first time that the charge-injection approach is applied to a distributed mixer. With the advantage of charge-injection, the mixer achieves a high conversion gain with low dc consumption. The fabricated distributed mixer with an integrated broadband transformer has a compact chip size of 2mmtimes1mm. Measurement results show that the mixer achieves a conversion gain of better than 3.5dB over a broadband frequency from 4-41GHz, with a relatively low dc power consumption of 100mWKeywords
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