Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing
- 26 March 2010
- journal article
- research article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 114 (15), 6894-6900
- https://doi.org/10.1021/jp910085n
Abstract
No abstract availableThis publication has 60 references indexed in Scilit:
- Charge Transfer Chemical Doping of Few Layer Graphenes: Charge Distribution and Band Gap FormationNano Letters, 2009
- Dielectric Screening Enhanced Performance in Graphene FETNano Letters, 2009
- The electronic properties of grapheneReviews of Modern Physics, 2009
- Doping Graphene with Metal ContactsPhysical Review Letters, 2008
- Charged-impurity scattering in grapheneNature Physics, 2008
- Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistorNature Nanotechnology, 2008
- Superior Thermal Conductivity of Single-Layer GrapheneNano Letters, 2008
- Detection of individual gas molecules adsorbed on grapheneNature Materials, 2007
- Electric Field Effect Tuning of Electron-Phonon Coupling in GraphenePhysical Review Letters, 2007
- Breakdown of the adiabatic Born–Oppenheimer approximation in grapheneNature Materials, 2007