Interface traps and dangling-bond defects in (100)Ge∕HfO2
- 13 July 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (3), 032107
- https://doi.org/10.1063/1.1947372
Abstract
Combined electrical and electron spin resonance analysis reveals dramatic differences in the interfacedefect properties of the ( 100 ) Ge ∕ Ge O x N y ∕ Hf O 2 and ( 100 ) Ge ∕ Ge O 2 interfaces from the seemingly similar interfaces of (100)Si with the Hf O 2 and Si O 2 . No dangling bond centers associated with Ge crystal surface atoms are detected. Only paramagneticdefects in the near-interfacial Ge oxide or Ge (oxy)nitride layers are observed. In contrast to the amphoteric traps related to the dangling bonds ( P b -type centers) commonly observed at the silicon/insulator interfaces, the major component of the Ge/insulator interface trap spectrum comes from slow acceptor states which show no correlation with paramagnetic centers and are resistant to passivation by hydrogen.Keywords
This publication has 18 references indexed in Scilit:
- Growth mechanism difference of sputtered HfO2 on Ge and on SiApplied Physics Letters, 2004
- Energy distribution of the (100)Si/HfO2 interface statesApplied Physics Letters, 2004
- Energy band alignment at the (100)Ge/HfO2 interfaceApplied Physics Letters, 2004
- Electrical characterization of germanium p-channel MOSFETsIEEE Electron Device Letters, 2003
- Si dangling-bond-type defects at the interface of (100)Si with ultrathin HfO2Applied Physics Letters, 2003
- Invasive nature of corona charging on thermal Si/SiO2 structures with nanometer-thick oxides revealed by electron spin resonanceApplied Physics Letters, 2003
- Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectricIEEE Electron Device Letters, 2002
- Si dangling-bond-type defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2Applied Physics Letters, 2002
- Paramagnetic defects at the interface of ultrathin oxides grown under vacuum ultraviolet photon excitation on (111) and (100) SiApplied Physics Letters, 2000
- Coadsorption and reaction of NH3 with NO, O and OH on Ge surfacesSurface Science, 1994