16K CMOS/SOS asynchronous static RAM
- 1 October 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 14 (5), 867-872
- https://doi.org/10.1109/JSSC.1979.1051287
Abstract
A new CMOS/SOS `buried-contact' process allows fabrication of dense static memory cells. The technology is applied in a 16K RAM with 1150 /spl mu/m/SUP 2/ (1.78 mil/SUP 2/) cells based on 5 /spl mu/m design rules.Keywords
This publication has 4 references indexed in Scilit:
- 16K CMOS/SOS asynchronous static RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- High-density CMOS ROM arraysIEEE Journal of Solid-State Circuits, 1977
- A 5 V-only 4-K static RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- High density COS/MOS 1024-bit static random access memoryIEEE Journal of Solid-State Circuits, 1975