Simulation of Schottky barrier tunnel transistor using simple boundary condition

Abstract

The current–voltage characteristics of a Schottky barrier tunnel transistor (SBTT) are simulated by considering the internal voltage drop at the Schottky barrier and using the current continuity condition between the tunneling and channel current. The numerical results show typical behaviors as can be found in many experimental results. From these results, a significantly higher threshold voltage is expected for the SBTT compared to the conventional metal–oxide–semiconductor field-effect transistors, because of the suppression of the tunneling current at low gate voltage. For the nanometer-size device application, a metal gate should be used to decrease the threshold voltage.