Electrical Manipulation of Magnetization Reversal in a Ferromagnetic Semiconductor
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- 15 August 2003
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 301 (5635), 943-945
- https://doi.org/10.1126/science.1086608
Abstract
We report electrical manipulation of magnetization processes in a ferromagnetic semiconductor, in which low-density carriers are responsible for the ferromagnetic interaction. The coercive force H C at which magnetization reversal occurs can be manipulated by modifying the carrier density through application of electric fields in a gated structure. Electrically assisted magnetization reversal, as well as electrical demagnetization, has been demonstrated through the effect. This electrical manipulation offers a functionality not previously accessible in magnetic materials and may become useful for reversing magnetization of nanoscale bits for ultrahigh-density information storage.Keywords
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