Resolution of Shubnikov-de Haas Paradoxes in Si Inversion Layers
- 7 January 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 44 (1), 47-50
- https://doi.org/10.1103/physrevlett.44.47
Abstract
In two dimensions the frequency of magnetoconductivity oscillations measures the sum of Fermi-surface areas when the Landau levels are sharp. This explains why (100) Si inversion layers with two occupied subbands show only one frequency. It also explains why the frequency observed on (111) surfaces simulates a valley degeneracy of 2, even though six valleys are occupied.Keywords
This publication has 11 references indexed in Scilit:
- Effects of uniaxial stress on the cyclotron resonance in inversion layers on Si (100)Solid State Communications, 1979
- Comparison of Shubnikov-de Haas effect and cyclotron resonance on Si(100) MOS transistors under uniaxial stressSolid State Communications, 1979
- Observation of Sixfold Valley Degeneracy in Electron Inversion Layers on Si(111)Physical Review Letters, 1979
- Surface quantum oscillations in silicon (100) inversion layers under uniaxial pressurePhysical Review B, 1978
- Many-valley interactions in-type silicon inversion layersPhysical Review B, 1978
- Valley degeneracy of electrons in accumulation and inversion layers on Si (111) surfaceSolid State Communications, 1976
- Valley degeneracy and mobility anisotropy under mechanical stress on (111) silicon inversion layersSolid State Communications, 1976
- Surface quantum oscillations in (110) and (111) n-type silicon inversion layersSolid State Communications, 1975
- Shubnikov de Haas oscillations in n-type inversion layers on (110) and (111) surfaces of SiPhysics Letters A, 1975
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967