Tin-induced reconstructions of the Si(100) surface

Abstract

The behavior of tin on the Si(100) 2×1 surface has been studied using scanning tunneling microscopy. At room temperatures (Tc(4×4) and 2×6 below 0.5 ML, c(4×8) for 0.5–1.0 ML, and 1×5 for 1.0–1.5 ML. A number of structures are observed by scanning tunneling microscopy which are associated with these reconstructions. Both the c(4×4) and 2×6 phases consist of missing Si dimer trenches and stripelike structures which grow perpendicular to the Si dimer rows. As the coverage is increased, the c(4×8) reconstruction occurs when chainlike structures, consisting of buckled Sn dimers, form on the surface between trenches. The 1×5 phase then grows over this c(4×8) layer and consists of bright features which are probably associated with Sn dimers. When more than 2 ML Sn is deposited and annealed, the surface undergoes a gross rearrangement and forms {311} facets.