Differential photocurrent transient measurements in a-Si:H
- 1 December 1983
- journal article
- Published by Elsevier BV in Journal of Non-Crystalline Solids
- Vol. 59-60, 297-300
- https://doi.org/10.1016/0022-3093(83)90580-x
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Study of gap states in hydrogenated amorphous silicon by transient and steady-state photoconductivity measurementsPhysical Review B, 1983
- Transient photoconductivity and photo-induced optical absorption in amorphous semiconductorsPhilosophical Magazine Part B, 1982
- Comparison of the dispersion parameters from time-of-flight and photo-induced midgap absorption measurements on sputtered a-Si:HSolid State Communications, 1982
- Energy dependence of electron-capture cross section of gap states in-type-Si:HPhysical Review B, 1982
- Trap-controlled dispersive transport and exponential band tails in amorphous siliconPhysical Review B, 1981
- A physical interpretation of dispersive transport in disordered semiconductorsSolid State Communications, 1981
- Determination of the density of gap states: field effect and surface adsorptionSolar Cells, 1980