Flexible Organic Memory Devices with Multilayer Graphene Electrodes
- 12 June 2011
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 5 (7), 5995-6000
- https://doi.org/10.1021/nn201770s
Abstract
We fabricated 8 × 8 cross-bar array-type flexible organic resistive memory devices with transparent multilayer graphene (MLG) electrodes on a poly(ethylene terephthalate) substrate. The active layer of the memory devices is a composite of polyimide and 6-phenyl-C61 butyric acid methyl ester. The sheet resistance of the MLG film on memory device was found to be ∼270 Ω/◻, and the transmittance of separated MLG film from memory device was ∼92%. The memory devices showed typical write-once-read-many (WORM) characteristics and an ON/OFF ratio of over ∼106. The memory devices also exhibited outstanding cell-to-cell uniformity with flexibility. There was no substantial variation observed in the current levels of the WORM memory devices upon bending and bending cycling up to 10 000 times. A retention time of over 104 s was observed without fluctuation under bending.Keywords
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