Strain relaxation of AlxGa1−xN epitaxial layers on GaN and SiC substrates
- 5 May 1999
- journal article
- Published by Elsevier BV in Journal of Alloys and Compounds
- Vol. 286 (1-2), 284-288
- https://doi.org/10.1016/s0925-8388(98)01022-6
Abstract
No abstract availableKeywords
Funding Information
- Korle-Bu Neuroscience Foundation (PBZ 28.11/P3)
- Komitet Badań Naukowych
This publication has 11 references indexed in Scilit:
- GaN and AlxGa1−xN molecular beam epitaxy monitored by reflection high-energy electron diffractionApplied Physics Letters, 1997
- Morphology and X-Ray Diffraction Peak Widths of Aluminum Nitride Single Crystals Prepared by the Sublimation MethodJapanese Journal of Applied Physics, 1997
- Optical Properties of Strained AlGaN and GaInN on GaNJapanese Journal of Applied Physics, 1997
- Critical thickness of GaN thin films on sapphire (0001)Applied Physics Letters, 1996
- Lattice parameters of gallium nitrideApplied Physics Letters, 1996
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Interpretation of x-ray rocking-curve broadening caused by lattice relaxation around metastable point defectsPhysical Review B, 1993
- Modulation doping in Ge(x)Si(1−x)/Si strained layer heterostructures: Effects of alloy layer thickness, doping setback, and cladding layer dopant concentrationJournal of Vacuum Science & Technology A, 1985
- Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxyJournal of Applied Physics, 1985
- Caractérisation des surfaces par réflexion rasante de rayons X. Application à l'étude du polissage de quelques verres silicatesRevue de Physique Appliquée, 1980