High-performance solar cell material: n-AlAs/p-GaAs prepared by vapor phase epitaxy
- 1 February 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (3), 150-152
- https://doi.org/10.1063/1.88671
Abstract
Solar cells with measured sea level sunlight power conversion efficiencies of 13–18% and areas of several cm2 have been prepared by vapor phase epitaxial growth of n‐AlAs on p‐GaAs substrates. The cells are provided with an antireflective passivating anodically grown coating and have much improved stability in the laboratory atmosphere.Keywords
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