Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping
- 12 June 2006
- journal article
- research article
- Published by Wiley in physica status solidi (c)
- Vol. 3 (6), 2160-2164
- https://doi.org/10.1002/pssc.200565366
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- High-power flip-chip blue light-emitting diodes based on AlGaInNSemiconductors, 2005
- Modelling study of MQW LED operationphysica status solidi (c), 2005
- Blue and near-ultraviolet light-emitting diodes on free-standing GaN substratesApplied Physics Letters, 2004
- Band parameters for nitrogen-containing semiconductorsJournal of Applied Physics, 2003
- Electrical properties and luminescence spectra of light-emitting diodes based on InGaN/GaN heterostructures with modulation-doped quantum wellsSemiconductors, 2003
- InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh ElectrodeJapanese Journal of Applied Physics, 2002
- Growth and properties of InGaN/GaN quantum wells and blue light emitting diodes by metal organic chemical vapour depositionSemiconductor Science and Technology, 2002
- Minority electron mobility in a p-n GaN photodetectorSemiconductor Science and Technology, 2000
- Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting DiodesJapanese Journal of Applied Physics, 1999
- Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operationSemiconductors, 1999