Molecular field-effect transistors using conducting polymer Langmuir–Blodgett films
- 19 March 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (12), 1157-1159
- https://doi.org/10.1063/1.103182
Abstract
Thin-film field-effect transistors (FETs) have been prepared using poly(3-hexylthiophene)/ arachidic acid and quinquethiophene/arachidic acid Langmuir–Blodgett (LB) films with thicknesses ranging from a monolayer to some ten monolayers. The effect of the number of layers on the mobility and conductivity has been studied. This is to our knowledge the first demonstration of a LB FET utilizing organic semiconductors as the active material.Keywords
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