Leakage Current IL Variation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAs

Abstract

Leakage current I _L equivalent to sheet resistance was measured by the two-point probe method, and was directly correlated with dislocation density variation across (100) wafers of undoped, semi-insulating LEC-grown GaAs. It was found, for the first time, that leakage current I _L variation corresponds closely to dislocation density.