High efficiency indium gallium arsenide photovoltaic devices for thermophotovoltaic power systems
- 2 May 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (18), 2415-2417
- https://doi.org/10.1063/1.111585
Abstract
No abstract availableKeywords
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- Simple, extremely low resistance contact system to n-InP that does not exhibit metal-semiconductor intermixing during sinteringApplied Physics Letters, 1993
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- Optimum efficiency of single and multiple bandgap cells in thermophotovoltaic energy conversionSolar Cells, 1986