A detailed study of p–n junction solar cells by means of collection efficiency
- 23 January 2007
- journal article
- Published by Elsevier BV in Solar Energy Materials and Solar Cells
- Vol. 91 (2-3), 160-166
- https://doi.org/10.1016/j.solmat.2006.08.002
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Effect of spatial variation of incident radiation on spectral response of a large area silicon solar cell and the cell parameters determined from itSolar Energy Materials and Solar Cells, 2003
- Reconstruction of the charge collection probability in a solar cell from internal quantum efficiency measurementsJournal of Applied Physics, 2001
- Effective diffusion lengths for minority carriers in solar cells as determined from internal quantum efficiency analysisJournal of Applied Physics, 1999
- The detailed balance principle and the reciprocity theorem between photocarrier collection and dark carrier distribution in solar cellsJournal of Applied Physics, 1998
- Photogenerated carrier collection in solar cells in terms of dark carrier distribution: three dimensionsIEEE Transactions on Electron Devices, 1997
- Generalized relationship between dark carrier distribution and photocarrier collection in solar cellsJournal of Applied Physics, 1997
- Relationship between dark carrier distribution and photogenerated carrier collection in solar cellsIEEE Transactions on Electron Devices, 1996
- Generalized reciprocity theorem for semiconductor devicesJournal of Applied Physics, 1985
- A reciprocity theorem for charge collectionApplied Physics Letters, 1985
- The physics and modeling of heavily doped emittersIEEE Transactions on Electron Devices, 1984